Description
General part information
BFR35APE6327HTSA1
NPN Silicon RF Transistor for low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20 mA
Technical Specifications
Parameters and characteristics for this part
| Specification | BFR35APE6327HTSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 0.045 mA |
| DC Current Gain (hFE) (Min) | 70 |
| Frequency - Transition | 5 GHz |
| Gain (Max) | 16 dB |
| Gain (Min) | 10.5 dB |
| Mounting Type | Surface Mount |
| Noise Figure (Typical) Maximum | 2 dB |
| Noise Figure (Typical) Minimum | 1.4 dB |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | PG-SOT23 |
| Power - Max | 280 mW |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
Pricing
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