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K6F2016U4E-EF70T

K6F2016U4E-EF70T

Obsolete
Samsung Semiconductor, Inc.

SRAM ASYNC SLOW 2M 128KX16 3.3V

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K6F2016U4E-EF70T

K6F2016U4E-EF70T

Obsolete
Samsung Semiconductor, Inc.

SRAM ASYNC SLOW 2M 128KX16 3.3V

Find alt

Description

General part information

K6F2016U4E-EF70T

SRAM ASYNC SLOW 2M 128KX16 3.3V

Technical Specifications

Parameters and characteristics for this part

SpecificationK6F2016U4E-EF70T
Memory Depth128 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size2 Mb
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length6 mm
Package Name48-TFBGA
Package Width7 mm
TechnologySRAM - Asynchronous
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page70 ns
Write Cycle Time - Word70 ns

Pricing

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