
SSM6K819R,LF
ActiveToshiba Semiconductor and Storage
N-CH MOSFET, 100 V, 10 A, 0.0258

SSM6K819R,LF
ActiveToshiba Semiconductor and Storage
N-CH MOSFET, 100 V, 10 A, 0.0258
Description
General part information
SSM6K819R,LF
N-CH MOSFET, 100 V, 10 A, 0.0258
Technical Specifications
Parameters and characteristics for this part
| Specification | SSM6K819R,LF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 10 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 8.5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | Flat Leads, 6-SMD |
| Package Name | 6-TSOP-F |
| Power Dissipation (Max) | 1.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 25.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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