Specification	SI1450DH-T1-GE3

Current - Continuous Drain (Id) (Ta)	4.53 A
Current - Continuous Drain (Id) (Tc)	6.04 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	7.05 nC
Input Capacitance (Ciss) (Max)	535 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Package Name	SC-70-6
Power Dissipation (Max)	1.56 W, 2.78 W
Rds On (Max)	47 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max)	1 V

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