
WNSC2D30650WQ
ObsoleteWeEn Semiconductors
DIODE SIL CARB 650V 30A TO2472

WNSC2D30650WQ
ObsoleteWeEn Semiconductors
DIODE SIL CARB 650V 30A TO2472
Description
General part information
WNSC2D30650WQ
DIODE SIL CARB 650V 30A TO2472
Technical Specifications
Parameters and characteristics for this part
| Specification | WNSC2D30650WQ |
|---|---|
| Capacitance | 980 pF |
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-2 |
| Package Name | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.7 V |
Pricing
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