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SQJ858AEP-T1_JB3

SQJ858AEP-T1_JB3

Active
Vishay Dale

N-CHANNEL 40-V (D-S) 175C MOSFET

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SQJ858AEP-T1_JB3

SQJ858AEP-T1_JB3

Active
Vishay Dale

N-CHANNEL 40-V (D-S) 175C MOSFET

Find alt

Description

General part information

SQJ858AEP-T1_JB3

N-CHANNEL 40-V (D-S) 175C MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationSQJ858AEP-T1_JB3
Current - Continuous Drain (Id) (Tc)58 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)55 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2450 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8
Package NamePowerPAK® SO-8
Power Dissipation (Max)48 W
QualificationAEC-Q101
Rds On (Max)6.3 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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