FDMD8580
ObsoleteON Semiconductor
DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 80V, 82A, 4.6MΩ
FDMD8580
ObsoleteON Semiconductor
DUAL N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 80V, 82A, 4.6MΩ
Description
General part information
FDMD8580
This device includes two 80V N-Channel MOSFETs in a dual power (5 mm X 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/ QgFOM silicon.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMD8580 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 16 A |
| Current - Continuous Drain (Id) (Tc) | 82 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Max) | 80 nC |
| Input Capacitance (Ciss) (Max) | 5875 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Name | Power56 |
| Power - Max | 2.3 W |
| Rds On (Max) | 4.6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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Documents
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