2SC5200-O(Q)
ActiveToshiba Semiconductor and Storage
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 230 V, 15 A, 150 W, TO-3P, THROUGH HOLE
2SC5200-O(Q)
ActiveToshiba Semiconductor and Storage
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 230 V, 15 A, 150 W, TO-3P, THROUGH HOLE
Description
General part information
2SC5200-O(Q)
2SC5200-O(Q) is a 230V, 15A, 150W, TO-3PL, through hole, silicon NPN triple diffused type transistor for power amplifier application.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SC5200-O(Q) |
|---|---|
| Current - Collector (Ic) (Max) | 15 A |
| Current - Collector Cutoff (Max) | 5 µA |
| DC Current Gain (hFE) (Min) | 80 |
| Frequency - Transition | 30 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-3PL |
| Package Name | TO-3P(L) |
| Power - Max | 150 W |
| Supplier Device Package | TO-3P, L |
| Transistor Type | NPN |
| Vce Saturation (Max) | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 230 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources