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Description

General part information

R6030ENX

MOSFET N-CH 600V 30A TO220FM

Technical Specifications

Parameters and characteristics for this part

SpecificationR6030ENX
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)85 nC
Input Capacitance (Ciss) (Max)2100 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220FM
Power Dissipation (Max)40 W
Rds On (Max)130 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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