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IPTC017N10NM5LF2ATMA1

IPTC017N10NM5LF2ATMA1

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INFINEON

IPTC017N10NM5LF2 IS OPTIMOS™ 5 SINGLE N-CHANNEL LINEAR FET 100 V, 1.7 MΩ, 351 A IN TOLT PACKAGE

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IPTC017N10NM5LF2ATMA1

IPTC017N10NM5LF2ATMA1

Active
INFINEON

IPTC017N10NM5LF2 IS OPTIMOS™ 5 SINGLE N-CHANNEL LINEAR FET 100 V, 1.7 MΩ, 351 A IN TOLT PACKAGE

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Description

General part information

IPTC017N10NM5LF2ATMA1

IPTC017N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the TO-Leaded top-side package. Offering the industry’s lowest RDS(on)and wide SOA at 25˚C. With the combination of OptiMOS™ 5 Linear FET 2 technology and TOLT package, the IPTC017N10NM5LF2 is designed to provide highest power density, for inrush current protection applications such as hot-swap, e-fuse, and within battery protection in Battery management systems (BMS).

Technical Specifications

Parameters and characteristics for this part

SpecificationIPTC017N10NM5LF2ATMA1
Current - Continuous Drain (Id) (Ta)32 A
Current - Continuous Drain (Id) (Tc)321 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)10 V
Drive Voltage (Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)206 nC
Input Capacitance (Ciss) (Max)17000 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case16-PowerSOP Module
Package NamePG-HDSOP-16-2
Power Dissipation (Max)3.8 W, 375 W
Rds On (Max)1.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.9 V

Pricing

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CAD

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