NSS1C200MZ4T3G
ActiveLOW V<SUB>CE(SAT)</SUB> TRANSISTOR, NPN, 100 V, 2.0 A/ REEL ROHS COMPLIANT: YES
NSS1C200MZ4T3G
ActiveLOW V<SUB>CE(SAT)</SUB> TRANSISTOR, NPN, 100 V, 2.0 A/ REEL ROHS COMPLIANT: YES
Description
General part information
NSS1C200MZ4T3G
Low VCE(sat)Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsatand high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
Technical Specifications
Parameters and characteristics for this part
| Specification | NSS1C200MZ4T3G |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 120 |
| Frequency - Transition | 120 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Package Name | SOT-223 (TO-261) |
| Power - Max | 800 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 220 mV |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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