Description
General part information
BCW66KGE6327HTSA1
NPN Silicon AF Transistors
Technical Specifications
Parameters and characteristics for this part
| Specification | BCW66KGE6327HTSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 800 mA |
| Current - Collector Cutoff (Max) | 20 nA |
| DC Current Gain (hFE) (Min) | 160 |
| Frequency - Transition | 170 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | PG-SOT23 |
| Power - Max | 0.5 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 450 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
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CAD
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