Specification	SICW050N065H4-BP

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	121 nC
Input Capacitance (Ciss) (Max)	1850 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	TO-247-4
Power Dissipation (Max)	250 W
Rds On (Max)	65 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-5 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	4.5 V

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