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MSC060SMB120B4N

MSC060SMB120B4N

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Microchip Technology

MOSFET SIC 1200 V 60 MOHM TO-247

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MSC060SMB120B4N

MSC060SMB120B4N

Active
Microchip Technology

MOSFET SIC 1200 V 60 MOHM TO-247

Find alt

Description

General part information

MSC060SMB120B4N

MOSFET SIC 1200 V 60 MOHM TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationMSC060SMB120B4N
Current - Continuous Drain (Id) (Tc)38 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On)15 V
Drive Voltage (Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)45 nC
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NameTO-247-4
Power Dissipation (Max)192 W
TechnologySiCFET (Silicon Carbide)
Vgs(th) (Max)5 V

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