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Description

General part information

STU9N65M2

MOSFET N-CH 650V 5A IPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationSTU9N65M2
Current - Continuous Drain (Id) (Tc)5 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)10 nC
Input Capacitance (Ciss) (Max)315 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NameTO-251 (IPAK)
Power Dissipation (Max)60 W
Rds On (Max)900 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

Pricing

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