Specification	XP4NA2R2HCST

Current - Continuous Drain (Id) (Ta)	36.5 A
Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	80 nC, 80 nC
Input Capacitance (Ciss) (Max)	4000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Length	5 mm
Package Name	SPPAK
Package Width	6 mm
Power Dissipation (Max)	5 W, 96.1 W
Rds On (Max)	2.28 mOhm, 2.28 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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