Description
General part information
IAUCN10S7L180ATMA1
IAUCN10S7L180 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm2SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUCN10S7L180ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 39 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 14.3 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 868 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-34 |
| Power Dissipation (Max) | 58 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 18 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) | 2 V |
Pricing
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