IGLT65R110B2AUMA1
ActiveTHE IGLT65R110B2 IS A 650 V NORMALLY-OFF BIDIRECTIONAL POWER TRANSISTORIN TOLT PACKAGE, ENABLING HIGH POWER DENSITY DESIGNS. THE COOLGAN(TM) BDS 650 V G5 ENABLES EFFICIENT VOLTAGE BLOCKING IN BOTH DIRECTIONS, MAKING IT A VERSATILE OPTION FOR A WIDE RANGE OF APPLICATIONS AND ENABLING COST-ATTRACTIVE TOPOLOGIES.
IGLT65R110B2AUMA1
ActiveTHE IGLT65R110B2 IS A 650 V NORMALLY-OFF BIDIRECTIONAL POWER TRANSISTORIN TOLT PACKAGE, ENABLING HIGH POWER DENSITY DESIGNS. THE COOLGAN(TM) BDS 650 V G5 ENABLES EFFICIENT VOLTAGE BLOCKING IN BOTH DIRECTIONS, MAKING IT A VERSATILE OPTION FOR A WIDE RANGE OF APPLICATIONS AND ENABLING COST-ATTRACTIVE TOPOLOGIES.
Description
General part information
IGLT65R110B2AUMA1
The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTMBDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.
Technical Specifications
Parameters and characteristics for this part
| Specification | IGLT65R110B2AUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 15.1 A, 14 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 1.52 nC |
| Input Capacitance (Ciss) (Max) | 150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 16-PowerSOP Module |
| Package Name | PG-HDSOP-16-9 |
| Power Dissipation (Max) | 55 W, 56 W |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | -10 V |
| Vgs(th) (Max) | 1.6 V |
Pricing
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