Specification	SIR5712DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	6.5 A
Current - Continuous Drain (Id) (Tc)	18 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11.3 nC
Input Capacitance (Ciss) (Max)	500 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	40 W, 5 W
Rds On (Max)	55.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Technical documentation and resources

No documents available