
FDD86069-F085
UnknownON Semiconductor
N-CHANNEL POWERTRENCH MOSFET 100

FDD86069-F085
UnknownON Semiconductor
N-CHANNEL POWERTRENCH MOSFET 100
Description
General part information
FDD86069-F085
N-CHANNEL POWERTRENCH MOSFET 100
Technical Specifications
Parameters and characteristics for this part
| Specification | FDD86069-F085 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 10.9 A |
| Current - Continuous Drain (Id) (Tc) | 51 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 19 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1332 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 (DPAK) |
| Power Dissipation (Max) | 3.1 W, 68.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 10.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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Documents
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