Specification	NTMSD6N303R2SG

Current - Continuous Drain (Id) (Ta)	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Isolated)
FET Type	N-Channel
Gate Charge (Max)	30 nC
Input Capacitance (Ciss) (Max)	950 pF
Mounting Type	Surface Mount
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	2 W
Rds On (Max)	32 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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