TRS8V65H,LQ
ActiveToshiba Semiconductor and Storage
DIODE SIL CARBIDE 650V 8A 4DFNEP
TRS8V65H,LQ
ActiveToshiba Semiconductor and Storage
DIODE SIL CARBIDE 650V 8A 4DFNEP
Description
General part information
TRS8V65H,LQ
DIODE SIL CARBIDE 650V 8A 4DFNEP
Technical Specifications
Parameters and characteristics for this part
| Specification | TRS8V65H,LQ |
|---|---|
| Capacitance | 520 pF |
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage | 90 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | 4-VSFN Exposed Pad |
| Package Length | 8 mm |
| Package Name | 4-DFN-EP |
| Package Width | 8 mm |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.35 V |
Pricing
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CAD
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Documents
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