Specification	APT10M11JVRU2

Current - Continuous Drain (Id) (Tc)	142 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	300 nC
Input Capacitance (Ciss) (Max)	8600 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power Dissipation (Max)	450 W
Rds On (Max)	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

APT10M11 Series

100V/Boost chopper/Si Mosfet modules

Part	Technology	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Rds On (Max)	FET Type	Drain to Source Voltage (Vdss)	Package Name	Package / Case	Current - Continuous Drain (Id) (Tc)	Mounting Type	Vgs(th) (Max)
Microchip Technology APT10M07JVFR	MOSFET (Metal Oxide)	21600 pF	1050 nC	7 mOhm	N-Channel	100 V	ISOTOP®	miniBLOC SOT-227-4	225 A	Chassis Mount	4 V
Microchip Technology APT10M09LVFRG	MOSFET (Metal Oxide)	9875 pF	350 nC	9 mOhm	N-Channel	100 V	TO-264 (L) TO-264 [L]	TO-264-3 TO-264AA	100 A	Through Hole	4 V
Microchip Technology APT10M11JVFR	MOSFET (Metal Oxide)	10380 pF	450 nC	11 mOhm	N-Channel	100 V	ISOTOP®	miniBLOC SOT-227-4	144 A	Chassis Mount	4 V
Microchip Technology APT10M19SVFRG	MOSFET (Metal Oxide)	6120 pF	300 nC	19 mOhm	N-Channel	100 V	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	75 A	Surface Mount	4 V

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