
NVTFS9D6P04M8L
ActiveON Semiconductor
MOSFET P-CH 20V 8-SOIC

NVTFS9D6P04M8L
ActiveON Semiconductor
MOSFET P-CH 20V 8-SOIC
Description
General part information
NVTFS9D6P04M8L
MOSFET P-CH 20V 8-SOIC
Technical Specifications
Parameters and characteristics for this part
| Specification | NVTFS9D6P04M8L |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 13 A |
| Current - Continuous Drain (Id) (Tc) | 64 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 34.6 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 2312 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Length | 3.3 mm |
| Package Name | 8-WDFN |
| Package Width | 3.3 mm |
| Power Dissipation (Max) | 75 W, 3.2 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 9.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.4 V |
Pricing
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CAD
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