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NVTFS9D6P04M8L

NVTFS9D6P04M8L

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ON Semiconductor

MOSFET P-CH 20V 8-SOIC

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NVTFS9D6P04M8L

NVTFS9D6P04M8L

Active
ON Semiconductor

MOSFET P-CH 20V 8-SOIC

Find alt

Description

General part information

NVTFS9D6P04M8L

MOSFET P-CH 20V 8-SOIC

Technical Specifications

Parameters and characteristics for this part

SpecificationNVTFS9D6P04M8L
Current - Continuous Drain (Id) (Ta)13 A
Current - Continuous Drain (Id) (Tc)64 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)34.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2312 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerWDFN
Package Length3.3 mm
Package Name8-WDFN
Package Width3.3 mm
Power Dissipation (Max)75 W, 3.2 W
QualificationAEC-Q101
Rds On (Max)9.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

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CAD

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Documents

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