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G18N20K

G18N20K

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Goford Semiconductor

MOSFET,N-CH,200V,18A,110W,TO-252

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G18N20K

G18N20K

Active
Goford Semiconductor

MOSFET,N-CH,200V,18A,110W,TO-252

Find alt

Description

General part information

G18N20K

MOSFET,N-CH,200V,18A,110W,TO-252

Technical Specifications

Parameters and characteristics for this part

SpecificationG18N20K
Current - Continuous Drain (Id) (Tc)18 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)31 nC
Input Capacitance (Ciss) (Max)1120 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)110 W
Rds On (Max)190 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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