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Description

General part information

FDB045AN08A0-F085C

MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB045AN08A0-F085C
Current - Continuous Drain (Id) (Ta)19 A
Current - Continuous Drain (Id) (Tc)90 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)138 nC, 138 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)6600 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)310 W
QualificationAEC-Q101
Rds On (Max)4.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

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