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JANSD2N2906A

JANSD2N2906A

Active
Microchip Technology

BIPOLAR TRANSISTORS - BJT 40V 600MA 400MW PNP RH SMALL-SIGNAL BJT THT

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JANSD2N2906A

JANSD2N2906A

Active
Microchip Technology

BIPOLAR TRANSISTORS - BJT 40V 600MA 400MW PNP RH SMALL-SIGNAL BJT THT

Find alt

Description

General part information

JANSD2N2906A

BIPOLAR TRANSISTORS - BJT 40V 600MA 400MW PNP RH SMALL-SIGNAL BJT THT

Technical Specifications

Parameters and characteristics for this part

SpecificationJANSD2N2906A
Current - Collector (Ic) (Max)0.6 mA
Current - Collector Cutoff (Max)50 nA
DC Current Gain (hFE) (Min)40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-18-3 Metal Can, TO-206AA
Package NameTO-18 (TO-206AA)
Power - Max0.5 W
QualificationMIL-PRF-19500, 291
Transistor TypePNP
Vce Saturation (Max)1.6 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

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Documents

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