Description
General part information
IRLML6302TRPBF
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRLML6302TRPBF |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 780 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 2.7 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 3.6 nC |
| Input Capacitance (Ciss) (Max) | 97 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | Micro3™/SOT-23 |
| Power Dissipation (Max) | 540 mW |
| Rds On (Max) | 600 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.5 V |
Pricing
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