Specification	SIDR610DP-T1-RE3

Current - Continuous Drain (Id) (Ta)	8.9 A
Current - Continuous Drain (Id) (Tc)	39.6 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	1380 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8DC
Power Dissipation (Max)	125 W, 6.25 W
Rds On (Max)	31.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

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