Description
General part information
IAUT165N08S5N029ATMA1
OPTI MOS-5 POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | IAUT165N08S5N029ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 165 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 90 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 6370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-1 |
| Power Dissipation (Max) | 167 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 2.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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