Zenode.ai Logo
DMWSH120H18HM4Q

DMWSH120H18HM4Q

Active
Diodes Inc

SIC MOSFET BVDSS: >1000V TO247-4

Find alt
DMWSH120H18HM4Q

DMWSH120H18HM4Q

Active
Diodes Inc

SIC MOSFET BVDSS: >1000V TO247-4

Find alt

Description

General part information

DMWSH120H18HM4Q

SIC MOSFET BVDSS: >1000V TO247-4

Technical Specifications

Parameters and characteristics for this part

SpecificationDMWSH120H18HM4Q
Current - Continuous Drain (Id) (Tc)108 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)158 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)4206 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NameTO-247-4
Power Dissipation (Max)313 W
QualificationAEC-Q101
Rds On (Max)18 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-10 V
Vgs (Max) Positive22 V
Vgs(th) (Max)4.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources