Description
General part information
IPT023N10NM5LF2ATMA1
The OptiMOS™ 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT023N10NM5LF2 is targeted for inrush current protection such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).
Technical Specifications
Parameters and characteristics for this part
| Specification | IPT023N10NM5LF2ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 27 A |
| Current - Continuous Drain (Id) (Tc) | 243 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 10 V |
| Drive Voltage (Min Rds On) | 15 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 144 nC, 144 nC |
| Input Capacitance (Ciss) (Max) | 12000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerSFN |
| Package Name | PG-HSOF-8-1 |
| Power Dissipation (Max) | 300 W, 3.8 W |
| Rds On (Max) | 2.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.9 V |
Pricing
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