Specification	SCTWA10N120

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	21 nC
Input Capacitance (Ciss) (Max)	300 pF
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	HiP247™ Long Leads
Power Dissipation (Max)	110 W
Rds On (Max)	690 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	3.5 V

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