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MURTA500120

MURTA500120

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GeneSiC Semiconductor

DIODE MOD GP 1200V 250A 3TOWER

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MURTA500120

MURTA500120

Active
GeneSiC Semiconductor

DIODE MOD GP 1200V 250A 3TOWER

Find alt

Description

General part information

MURTA500120

DIODE MOD GP 1200V 250A 3TOWER

Technical Specifications

Parameters and characteristics for this part

SpecificationMURTA500120
Current - Average Rectified (Io) (per Diode)250 A
Current - Reverse Leakage25 µA
Diode ConfigurationCommon Cathode
Diode Pair Count1 pair
Mounting TypeChassis Mount
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseThree Tower
Package NameThree Tower
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)2.6 V

Pricing

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CAD

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Documents

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