
MURTA500120
ActiveGeneSiC Semiconductor
DIODE MOD GP 1200V 250A 3TOWER

MURTA500120
ActiveGeneSiC Semiconductor
DIODE MOD GP 1200V 250A 3TOWER
Description
General part information
MURTA500120
DIODE MOD GP 1200V 250A 3TOWER
Technical Specifications
Parameters and characteristics for this part
| Specification | MURTA500120 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 250 A |
| Current - Reverse Leakage | 25 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | Three Tower |
| Package Name | Three Tower |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 2.6 V |
Pricing
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CAD
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Documents
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