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DMTH42M4SPS-13

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Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for PowerDI5060-8

DMTH42M4SPS-13

Active
Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMTH42M4SPS-13

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMTH42M4SPS-13
Current - Continuous Drain (Id) (Tc)200 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)79.5 nC
Input Capacitance (Ciss) (Max)6968 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerTDFN
Package NamePowerDI5060-8 (Type K)
Power Dissipation (Max)3.06 W, 150 W
Rds On (Max)2.4 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part