SF808G

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Taiwan Semiconductor Corporation

DIODE STANDARD 600V 8A TO220AB

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Taiwan Semiconductor Corporation

DIODE STANDARD 600V 8A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SF808G

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Current - Average Rectified (Io)	Supplier Device Package	Technology	Package / Case
Taiwan Semiconductor Corporation SF808G	150 °C	-55 °C	600 V	200 mA 500 ns	Through Hole	10 µA	1.7 V	35 ns	50 pF	8 A	TO-220AB	Standard	TO-220-3

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General part information

Diode 600 V 8A Through Hole TO-220AB

Technical documentation and resources