NP100P06PLG-E1-AY
ActiveRenesas Electronics Corporation
MOSFET P-CH 60V 100A TO263
NP100P06PLG-E1-AY
ActiveRenesas Electronics Corporation
MOSFET P-CH 60V 100A TO263
Description
General part information
NP100P06PLG-E1-AY
MOSFET P-CH 60V 100A TO263
Technical Specifications
Parameters and characteristics for this part
| Specification | NP100P06PLG-E1-AY |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 300 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 15000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263 |
| Power Dissipation (Max) | 200 W, 1.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
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