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Description

General part information

AN1L3N

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 250 mW Through Hole TO-92

Technical Specifications

Parameters and characteristics for this part

SpecificationAN1L3N
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)80
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92
Power - Max250 mW
Resistor - Base (R1) Resistance4.7 kOhm
Resistor - Emitter Base (R2)10 kOhms
Transistor TypePre-Biased, PNP
Vce Saturation (Max)200 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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