
HGTD3N60B3
ActiveON Semiconductor
IGBT 600V 7A IPAK

HGTD3N60B3
ActiveON Semiconductor
IGBT 600V 7A IPAK
Description
General part information
HGTD3N60B3
IGBT 600 V 7 A 33.3 W Through Hole IPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTD3N60B3 |
|---|---|
| Current - Collector (Ic) (Max) | 7 A |
| Current - Collector Pulsed (Icm) | 20 A |
| Gate Charge | 21 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Package Name | IPAK |
| Power - Max | 33.3 W |
| Reverse Recovery Time (trr) | 16 ns |
| Switching Energy (Off) | 88 µJ |
| Switching Energy (On) | 66 µJ |
| Td (off) @ 25°C | 105 ns |
| Td (on) @ 25°C | 18 ns |
| Test Condition Current | 3.5 A |
| Test Condition Resistance | 82 Ohm |
| Test Condition Voltage | 480 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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