QEE273
ObsoleteON Semiconductor
EMITTER IR 850NM 100MA RADIAL
QEE273
ObsoleteON Semiconductor
EMITTER IR 850NM 100MA RADIAL
Description
General part information
QEE273
EMITTER IR 850NM 100MA RADIAL
Technical Specifications
Parameters and characteristics for this part
| Specification | QEE273 |
|---|---|
| Current - DC Forward (If) (Max) | 100 mA |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 100 °C |
| Operating Temperature (Min) | -40 °C |
| Orientation | Side View |
| Package / Case | Side View, Radial |
| Radiant Intensity (Ie) Min | 18 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle | 30 ° |
| Voltage - Forward (Vf) (Typ) | 1.8 V |
| Wavelength | 850 nm |
Pricing
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