FCP25N60N
ObsoleteON Semiconductor
MOSFET N-CH 600V 25A TO220-3
FCP25N60N
ObsoleteON Semiconductor
MOSFET N-CH 600V 25A TO220-3
Description
General part information
FCP25N60N
MOSFET N-CH 600V 25A TO220-3
Technical Specifications
Parameters and characteristics for this part
| Specification | FCP25N60N |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 25 A, 25 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 74 nC |
| Input Capacitance (Ciss) (Max) | 3352 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220-3 |
| Power Dissipation (Max) | 216 W |
| Rds On (Max) | 125 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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