Description
General part information
BFS483H6327XTSA1
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
Technical Specifications
Parameters and characteristics for this part
| Specification | BFS483H6327XTSA1 |
|---|---|
| Current - Collector (Ic) (Max) | 65 mA |
| DC Current Gain (hFE) (Min) | 70 |
| Frequency - Transition | 8 GHz |
| Gain | 19 dB |
| Mounting Type | Surface Mount |
| Noise Figure (Typical) Maximum | 1.4 dB |
| Noise Figure (Typical) Minimum | 0.9 dB |
| NPN Count | 2 |
| Operating Temperature | 150 °C |
| Package / Case | 6-VSSOP, SOT-363, SC-88 |
| Package Name | PG-SOT363-PO |
| Power - Max | 450 mW |
| Transistor Configuration | Dual |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
Pricing
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