MBRH200200R
ActiveGeneSiC Semiconductor
DIODE SCHOTTKY REV 200V 200A D67
MBRH200200R
ActiveGeneSiC Semiconductor
DIODE SCHOTTKY REV 200V 200A D67
Description
General part information
MBRH200200R
DIODE SCHOTTKY REV 200V 200A D67
Technical Specifications
Parameters and characteristics for this part
| Specification | MBRH200200R |
|---|---|
| Current - Average Rectified (Io) | 200 A |
| Current - Reverse Leakage | 1 mA |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | D-67 |
| Package Name | D-67 |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 920 mV |
Pricing
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CAD
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Documents
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