Description
General part information
IPQC60R010S7XTMA1
The600 V CoolMOS™ S7 SJ MOSFETfamily is optimized for low conduction losses and features the lowest RDS(on)in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on)x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPQC60R010S7XTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 50 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 318 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 22-PowerBSOP Module |
| Package Name | PG-HDSOP-22 |
| Power Dissipation (Max) | 694 W |
| Rds On (Max) | 10 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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CAD
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