TRS20N120HB,S1Q
ActiveToshiba Semiconductor and Storage
DIODE ARRAY SIC 1200V 32A TO-247
TRS20N120HB,S1Q
ActiveToshiba Semiconductor and Storage
DIODE ARRAY SIC 1200V 32A TO-247
Description
General part information
TRS20N120HB,S1Q
DIODE ARRAY SIC 1200V 32A TO-247
Technical Specifications
Parameters and characteristics for this part
| Specification | TRS20N120HB,S1Q |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 32 A |
| Current - Reverse Leakage | 80 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.45 V |
Pricing
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