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MT41K512M8DA-093:P

MT41K512M8DA-093:P

LTB
Micron Technology Inc.

DRAM, DDR3L, 4 GBIT, 512M X 8BIT, 1.066 GHZ, TFBGA, 78 PINS

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MT41K512M8DA-093:P

MT41K512M8DA-093:P

LTB
Micron Technology Inc.

DRAM, DDR3L, 4 GBIT, 512M X 8BIT, 1.066 GHZ, TFBGA, 78 PINS

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Description

General part information

MT41K512M8DA-093:P

MT41K512M8DA-093:P is a DDR3L SDRAM (1.35V). The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clock cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#).

Technical Specifications

Parameters and characteristics for this part

SpecificationMT41K512M8DA-093:P
Access Time20 ns
Clock Frequency1.066 GHz
Memory Depth512 M
Memory FormatDRAM
Memory Interface (Type)Parallel
Memory Size4 Gbit
Memory TypeVolatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)95 °C
Operating Temperature (Min)0 °C
Package / Case78-TFBGA
Package Length8 mm
Package Name78-FBGA
Package Width10.5 mm
TechnologySDRAM - DDR3L
Voltage - Supply (Maximum)1.45 V
Voltage - Supply (Minimum)1.283 V

Pricing

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