Description
General part information
BSC088N15LS5ATMA1
The OptiMOS™ 5 power MOSFET logic level 150 V family offers the same excellent performance of the OptiMOS™ 5 150 V products with the capability of operating with just 4.5 V of Vgs. The BSC088N15LS5 features very low RDS(on)of 8.8/12 mOhm (VGS= 10 V/4.5 V) and very low Qgof 21 nC (VGS= 4.5 V) in an industry standard SuperSO8 package enabling optimal thermal management in small and lightweight USB-PD EPR charger and adapter applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BSC088N15LS5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 11.7 A |
| Current - Continuous Drain (Id) (Tc) | 87 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 26 nC |
| Input Capacitance (Ciss) (Max) | 3500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8 |
| Power Dissipation (Max) | 139 W, 2.5 W |
| Rds On (Max) | 8.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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