
GT52N10D5I
ObsoleteGoford Semiconductor
N100V,65A,RD<8M@10V,VTH1.0V~2.5V

GT52N10D5I
ObsoleteGoford Semiconductor
N100V,65A,RD<8M@10V,VTH1.0V~2.5V
Description
General part information
GT52N10D5I
N100V,65A,RD<8M@10V,VTH1.0V~2.5V
Technical Specifications
Parameters and characteristics for this part
| Specification | GT52N10D5I |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 65 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 35 nC |
| Input Capacitance (Ciss) (Max) | 2428 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 4.9 mm |
| Package Name | 8-DFN |
| Package Width | 5.75 mm |
| Power Dissipation (Max) | 79 W |
| Rds On (Max) | 7.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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