Description
General part information
DD800S17H4B2BOSA2
1700 V, 800 AIHMB130 mm Diode Module with AlSiC base-plate and Emitter Controlled 4 - Diode - The best solution for your traction and industry applications. Predestined to be combined withIGBT4 products.
Technical Specifications
Parameters and characteristics for this part
| Specification | DD800S17H4B2BOSA2 |
|---|---|
| Diode Configuration | Independent |
| Diode Count | 2 |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | Module |
| Package Name | AG-IHMB130-1 |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) | 2.1 V, 2.1 V |
Pricing
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CAD
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Documents
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