Specification	AOWF412

Current - Continuous Drain (Id) (Ta)	7.8 A
Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	7 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	54 nC
Input Capacitance (Ciss) (Max)	3220 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	TO-262F
Power Dissipation (Max)	2.1 W, 33 W
Rds On (Max)	15.8 mOhm, 15.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	3.8 V

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